FPDA200V vias equivalent, high performance phemt with source vias.
* 21 dBm Output Power at 1-dB Compression at 18 GHz
* 12.5 dB Power Gain at 18 GHz
* 55% Power-Added Efficiency
* Source Vias to Backside Metallization
F.
The FPDA200V is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobil.
AND APPLICATIONS The FPDA200V is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 µm by 200 µm Schottky barrier gate. The reces.
Image gallery
Download